Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-11-02
2008-09-16
Le, Vu A (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185220
Reexamination Certificate
active
07426139
ABSTRACT:
A method for operating a multi-level cell (“MLC”) memory array of an integrated circuit (“IC”) programs first data into a first plurality of MLCs in the MLC memory array at a first programming level. Threshold voltages for the first plurality of MLCs are sensed, and an adjust code is set according to the threshold voltages. Second data is programmed into a second plurality of MLCs in the MLC memory array at a second programming level, the second plurality of MLCs having a program-verify value set according to the adjust code. In a further embodiment, a reference voltage for reading the second plurality of MLCs is set according to the adjust code.
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Chang Chin Hung
Chang Kuen-Long
Ho Wen Chiao
Hung Chun Hsiung
Haynes Beffel & Wolfeld LLP
Le Vu A
Macronix International Co. Ltd.
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