Dynamic program and read adjustment for multi-level cell...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185220

Reexamination Certificate

active

07426139

ABSTRACT:
A method for operating a multi-level cell (“MLC”) memory array of an integrated circuit (“IC”) programs first data into a first plurality of MLCs in the MLC memory array at a first programming level. Threshold voltages for the first plurality of MLCs are sensed, and an adjust code is set according to the threshold voltages. Second data is programmed into a second plurality of MLCs in the MLC memory array at a second programming level, the second plurality of MLCs having a program-verify value set according to the adjust code. In a further embodiment, a reference voltage for reading the second plurality of MLCs is set according to the adjust code.

REFERENCES:
patent: 6538923 (2003-03-01), Parker
patent: 6714457 (2004-03-01), Hsu et al.
patent: 6836432 (2004-12-01), Parker et al.
patent: 7330376 (2008-02-01), Chen et al.
patent: 2006/0098483 (2006-05-01), Chen et al.
patent: 2006/0164884 (2006-07-01), Wu
Eitan, et al., “4-bit per Cell NROM Reliability,” Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, Volume , Issue , Dec. 5, 2005 pp. 539-542.
Polansky, et al., “A 4b/cell NROM 1Gb Data-Storage Memory,” ISSCC 2006, Session 7, Non-Volatile Memory paper 7.1.

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