Dynamic polarization for reducing stress induced leakage...

Details Dynamic polarization for reducing stress induced leakage... Dynamic polarization for reducing stress induced leakage...

2011-05-10

2011-05-10

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

Reexamination Certificate

active

07940568

ABSTRACT:
Subject matter disclosed herein relates to non-volatile flash memory, and more particularly to a method of reducing stress induced leakage current.

REFERENCES:
patent: 2004/0160839 (2004-08-01), Kim
patent: 2004/0264264 (2004-12-01), Yaegashi et al.
patent: 2006/0140009 (2006-06-01), Lojek
Patent Application filed Oct. 1, 2009 in co-pending U.S. Appl. No. 12/572,182, 27 pages.
Ielmini et al., “A new charge-trapping technique to extract SILC-trap time constants in SIO2” IEDM Tech. Dig., S22.2, 4 pages, 2005.

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