Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1980-12-15
1984-10-02
Larkins, William D.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 2311, 357 51, 357 59, 365149, H01L 2704, G11C 1140
Patent
active
044751184
ABSTRACT:
An improved dynamic MOS RAM having a plurality of selection lines and data lines and a plurality of storage cells connected thereto, wherein each storage cell includes a storage capacitor having first and second plates, wherein the second plate is adapted to be coupled to a reference potential terminal; and a MOSFET having a semiconductor substrate, a gate connected to one of the selection lines, a first conduction terminal coupled to one of the data lines, and a second conduction terminal connected in common with a first plate of the storage capacitor, is disclosed. The first plate of the storage capacitor includes first doped polysilicon conductive layer that has the majority of its area separated from the semiconductor substrate of the MOSFET by at least an insulating layer. The second plate of the storage capacitor includes a second doped polysilicon conductive layer that is at least coextensive with and insulated from the first conductive layer. The transistor gate is defined by a third doped polysilicon conductive layer that is insulated from the first and second conductive layers. Approximately 45% of the cell area can be utilized for charge storage, and only about 20% of this storage area is susceptible to loss of charge by reason of leakage through the depletion/junction area in the substrate.
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Smith, Jr., IBM Technical Discl. Bulletin, vol. 15, No. 12, May 1973, pp. 3385-3386.
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Tasch et al., IEEE Trans. on Electron Devices, vol. Ed-23, No. 2, Feb. 1975, pp. 126-131.
Boettcher Charles E.
Klein Thomas
Larkins William D.
National Semiconductor Corporation
Pollock Michael J.
Winters Paul J.
Woodward Gail W.
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