Semiconductor device manufacturing: process – Including control responsive to sensed condition
Reexamination Certificate
2007-02-13
2007-02-13
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
C438S437000, C438S702000, C438S763000, C438S007000, C438S424000, C257SE21530, C257SE21546
Reexamination Certificate
active
10947424
ABSTRACT:
A method for process optimization to extend the utility of the HDP CVD gap fill technique modifies the characteristics of the HDP process (deposition and sputter components) in a dynamic mode in the course of filling a trench with dielectric material. As a result, the amount of dielectric deposited on the sidewall of the trench relative to that deposited at its bottom can be reduced and optimally minimized, thus improving the gap fill capability of the process. The dynamic modification of process characteristics provides enhanced process performance, since the optimization of these characteristics depends upon structure geometry, which is constantly changing during a gap fill operation. During the course of the gap fill operation, either at one or more discrete points or continuously, the evolution of the feature geometry is determined, either by direct measurement or in accordance with a growth model. The deposition process is modified to optimize the characteristics to the partially-filled feature geometry, and further filling the partially-filled feature using the modified deposition process is conducted. The process modification, including the geometry determination, and further filling with optimized process characteristics is optionally repeated until the gap is filled. In semiconductor manufacture, the invention relates to HDP CVD processes used to deposit IMD, ILD, or STI films for gap fill applications.
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Bayman Atiye
Papasouliotis George D.
Beyer Weaver & Thomas LLP.
Fourson George
Novellus Systems Inc.
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