Dynamic memory device with an RC circuit for inhibiting the effe

Details Dynamic memory device with an RC circuit for inhibiting the effe Dynamic memory device with an RC circuit for inhibiting the effe

1983-03-15

1987-02-03

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 29, 357 41, 357 51, 357 84, 365149, H01L 2714

Patent

active

046411658

ABSTRACT:
The dynamic memory device of the present invention is formed on an integrated semiconductor substrate subjected to alpha radiation and comprises a switching transistor having a switching terminal, an input-output terminal and a memory terminal; a bit line couple to said input-output terminal for supplying a charge to said transistor; a word line coupled to said switching terminal for controlling the switching of said transistor; and, an R-C circuit coupled to the memory terminal and comprising a charge storage capacitor for storing the charge supplied from said bit line and for substantially preventing loss of the stored charge due to particle radiation.

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patent: 4115871 (1978-09-01), Varadi
patent: 4156939 (1979-05-01), Takemae et al.
patent: 4164751 (1979-08-01), Tasch, Jr.
patent: 4184085 (1980-01-01), Takahashi
patent: 4240195 (1980-12-01), Clemens et al.
patent: 4271420 (1981-06-01), Chikamura et al.
patent: 4419743 (1983-12-01), Taguchi et al.
Hu, "Alpha-Particle-Induced Field and Enhanced Collections of Carriers"IEEE Elec. Dev. Lett, Vol. EDL-3, No. 2, Feb. 1982.
Hsieh et al., "A-Field-Funnelling Effect on the Collection of Alpha-Particle-Generated Carriers in Silicon Devices", IEEE Elec. Dev. Letts., vol. EDL-2, No. 4, Apr. 1981.

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