Dynamic memory

Details Dynamic memory Dynamic memory

1998-04-10

2000-02-29

Hoang, Huan

Static information storage and retrieval

Powering

36518909, 365205, 365203, G11C 700

Patent

active

060317795

ABSTRACT:
Described herein is a dynamic memory. An N channel type voltage clamp MOSFET is provided which has a drain supplied with a supply voltage supplied from an external terminal, a gate to which a boosted constant voltage is applied, and a source which outputs a constant voltage. The clamp voltage outputted from the source of the voltage clamp MOSFET is supplied to a common source line for each of P channel type amplification MOSFETs constituting a sense amplifier via a P channel type first power MOSFET switch-controlled by a sense amplifier activation signal, as a voltage for operating the sense amplifier. Further, the constant voltage outputted from the source of the voltage clamp MOSFET is supplied to an N-well region in which the P channel type first power MOSFET and the P channel type MOSFETs constituting the sense amplifier are formed, as a bias voltage.

REFERENCES:
patent: 5398207 (1995-03-01), Tsuchida et al.
patent: 5646900 (1997-07-01), Tsukude et al.

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