Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2007-12-28
2011-11-29
Norton, Nadine G (Department: 1713)
Etching a substrate: processes
Nongaseous phase etching of substrate
With measuring, testing, or inspecting
C216S088000, C360S112000, C360S313000, C360S324000
Reexamination Certificate
active
08066897
ABSTRACT:
A method for manufacturing a current perpendicular to plane magnetoresistive sensor that allows for dynamic adjustment of free layer biasing to compensate for variations in thickness of an electrically insulating layer that separates the hard bias layers from the free layer. During fabrication of the sensor, the actual thickness of the insulation layers is measured. Then, to maintain a desired magnetic stabilization of the free layer one of three options can be utilized. Option one; adjust the stripe height target to maintain the desired magnetic stabilization. Option two; adjust the hard magnet thickness to maintain the desired magnetic stabilization. Option three; use a combination of option one and option two, adjusting both the stripe height target and the hard magnet thickness to maintain the desired magnetic stabilization.
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Hitachi Global Storage Technologies - Netherlands B.V.
Lin Patti
Norton Nadine G
Zilka-Kotab, PC
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