Dynamic burn-in equipment

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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Details

C324S765010, C324S1540PB, C324S754120

Reexamination Certificate

active

07023229

ABSTRACT:
An infrared sensor is provided in a burn-in chamber. The surface temperatures of two or more semiconductor devices are measured by the sensor. A control unit calculates the internal temperatures of the semiconductor devices based on the thermal resistance values of the semiconductor device packages and controls the temperature inside the burn-in chamber so that the average of the internal temperatures is brought to a desired temperature by using a temperature controller. Further, an acceleration coefficient is obtained based on the internal temperatures, a burn-in time is determined based on the acceleration coefficient and a preliminarily given accelerated period, and a burn-in acceleration test is conducted. Moreover, when a defective semiconductor is found, the defective portion of the defective semiconductor device is specified based on the surface temperature distribution of the semiconductor device measured by the infrared sensor.

REFERENCES:
patent: 5414370 (1995-05-01), Hashinaga et al.
patent: 5473259 (1995-12-01), Takeda
patent: 6215324 (2001-04-01), Yoshida
patent: 6262584 (2001-07-01), Kurosu et al.
patent: 63115074 (1988-05-01), None
patent: 01053174 (1989-03-01), None
patent: 08076857 (1996-03-01), None
patent: 2000097990 (2000-04-01), None
patent: 2000-206176 (2000-07-01), None
patent: 2001272434 (2001-10-01), None
patent: 2001324390 (2001-11-01), None

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