Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2008-09-17
2010-11-30
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257SE27099
Reexamination Certificate
active
07842975
ABSTRACT:
A semiconductor device includes a substrate portion and a number of diffusion regions defined within the substrate portion. The diffusion regions are separated from each other by a non-active region of the substrate portion. The semiconductor device includes a number of linear gate electrode segments defined to extend over the substrate portion in a single common direction. In one embodiment, the diffusion regions are defined in a non-symmetrical manner relative to a centerline of the substrate portion. In another embodiment, the substrate portion corresponds to a region of the semiconductor device in which first and second cells are defined, and respectively include diffusion shapes of different size. In another embodiment, one or more of the diffusion regions is defined to have a periphery formed by more than four orthogonally related sides.
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Becker Scott T.
Smayling Michael C.
Hoang Quoc D
Martine & Penilla & Gencarella LLP
Tela Innovations, Inc.
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