Dynamic array architecture

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device

Reexamination Certificate

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C257S211000, C257SE27099

Reexamination Certificate

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07446352

ABSTRACT:
A semiconductor device includes a substrate and a number of diffusion regions defined within the substrate. The diffusion regions are separated from each other by a non-active region of the substrate. The semiconductor device includes a number of linear gate electrode tracks defined to extend over the substrate in a single common direction. Each linear gate electrode track is defined by one or more linear gate electrode segments. Each linear gate electrode track that extends over both a diffusion region and a non-active region of the substrate is defined to minimize a separation distance between ends of adjacent linear gate electrode segments within the linear gate electrode track, while ensuring adequate electrical isolation between the adjacent linear gate electrode segments.

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