Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-06-07
2011-06-07
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185190, C365S185240, C365S189070, C365S189040
Reexamination Certificate
active
07957187
ABSTRACT:
A process is performed periodically or in response to an error in order to dynamically and adaptively optimize read compare levels based on memory cell threshold voltage distribution. One embodiment of the process includes determining threshold voltage distribution data for a population of non-volatile storage elements, smoothing the threshold voltage distribution data using a weighting function to create an interim set of data, determining a derivative of the interim set of data, and identifying and storing negative to positive zero crossings of the derivative as read compare points.
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Murin, et al., U.S. Appl. No. 12/111,729, filed Apr. 29, 2008, “Method for Adaptive Setting of State Voltage Levels in Non-Volatile Memory,”.
Chin Henry
Mokhlesi Nima
Le Thong Q
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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