DV/DT Protection circuit device for gate turn-off thyristor

Details DV/DT Protection circuit device for gate turn-off thyristor DV/DT Protection circuit device for gate turn-off thyristor

1977-12-21

1981-06-23

Salce, Patrick R.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361 58, 363 50, 363 54, 363 57, H02H 710

Patent

active

042754305

ABSTRACT:
A snubber circuit is connected between the anode and cathode of a gate turn-off (GTO) thyristor. To the GTO thyristor a saturable reactor is connected in series. A gate off signal is supplied to the gate of the GTO thyristor and to the saturable reactor as backward current to reset the saturable reactor.

REFERENCES:
patent: 3353032 (1967-11-01), Morgan et al.
patent: 3462754 (1969-08-01), Kelley
patent: 3524990 (1970-08-01), Bajpai et al.
patent: 3532901 (1970-10-01), Cavallius et al.
patent: 3943430 (1976-03-01), Kumano
patent: 4016433 (1977-04-01), Brooks

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