Durable CFC support crucible for high-temperature processes...

Details Durable CFC support crucible for high-temperature processes... Durable CFC support crucible for high-temperature processes...

2007-06-26

2007-06-26

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S013000, C117S030000, C117S213000, C117S900000

Reexamination Certificate

active

10846785

ABSTRACT:
In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials, carbon fiber-reinforced carbon (CFC), combinations thereof or carbon materials coated with silicon carbide (SiC) are used. The working life of a CFC support crucible can be extended by a partial thickening of the support crucible walls affected by corrosion processes.

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