Dummy wafer

Details Dummy wafer Dummy wafer

1997-06-20

1998-12-29

Thomas, Alexander

Stock material or miscellaneous articles

Circular sheet or circular blank

219649, 118500, 428408, 428698, B32B 1800

Patent

active

058538402

ABSTRACT:
A dummy wafer for use in a process for thin film formation on a wafer, which is made of a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas, or comprises (1) a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas and (2) a silicon carbide layer formed thereon by CVD.
This dummy wafer alleviates the problems of the prior art; shows no warpage and contains no metal to become a contamination source for a semiconductor; has corrosion resistance to hydrofluoric acid, hydrochloric acid, etc., heat resistance and resistance to repeated heat cycles; and is inexpensive.

REFERENCES:
patent: 5514439 (1996-05-01), Sibley

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