Dummy wafer

Details Dummy wafer Dummy wafer

1996-04-25

2000-11-21

Krynski, William

Stock material or miscellaneous articles

Self-sustaining carbon mass or layer with impregnant or...

428212, 428688, 428689, 428698, B32B 900

Patent

active

061500232

ABSTRACT:
The present invention provides a test dummy wafer used in the process for manufacturing a semiconductor device, which has more excellent etching resistance than a silicon wafer, and excellent mirror surface properties and evenness required for a substrate, and which causes no contamination source in the manufacturing process. The dummy wafer is composed of glassy carbon, and at least one side thereof is preferably polished to a mirror surface having a surface roughness Ra of not more than 0.005 .mu.m. The dummy wafer of the present invention has excellent characteristics as a dummy wafer for monitoring the thickness of a CVD film. The dummy wafer having specific electric resistance of not more than 0.1 .OMEGA..multidot.cm exhibits excellent characteristics as a dummy wafer for monitoring the thickness of a film formed by sputtering and confirming cleanliness.

REFERENCES:
patent: 4856887 (1989-08-01), Wakugawa
patent: 5149338 (1992-09-01), Fulton
Webster's II, New Riverside University Dictionary, p. 533, 1995.
CRC 64.sup.th Ed, 1983-84 p. D-39.
Patent Abstracts of Japan, vol. 018, No. 626 (E-1636), Nov. 29, 1994 & JP 06 244142 A (Sumitomo Electric Ind Ltd), Sep. 2, 1994 *Abstract*.
Patent Abstracts of Japan vol. 096, No. 001, Jan. 31, 1996 & JP 07 240401 A (Nisshinbo Ind Inc), Sep. 12, 1995 *Abstract*.

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