Dummy via for reducing proximity effect and method of using...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S621000, C257SE21597, C257SE21577, C257SE21578, C438S629000, C438S668000, C438S672000

Reexamination Certificate

active

07545045

ABSTRACT:
A dummy via design for a dual damascene structure has a dielectric layer on a substrate, a dual damascene structure filled with a conductive material and inlaid in the dielectric layer, and a dummy via structure filled with a non-conductive material and inlaid in the dielectric layer. The dummy via structure has at least two dummy vias filled with the non-conductive material and located adjacent to two sides of the dual damascene structure respectively.

REFERENCES:
patent: 6660619 (2003-12-01), Pangrle et al.
patent: 6787454 (2004-09-01), Saito
patent: 2002/0079585 (2002-06-01), Wong
patent: 2002/0173105 (2002-11-01), Park et al.
patent: 2003/0170978 (2003-09-01), Lee
patent: 2004/0084761 (2004-05-01), Karthikeyan et al.
patent: 2004/0266184 (2004-12-01), RamachandraRao et al.
patent: 2005/0035457 (2005-02-01), Tomita et al.
patent: 2005/0106886 (2005-05-01), Goodner et al.
patent: 2006/0012052 (2006-01-01), McDevitt et al.
patent: 2006/0029879 (2006-02-01), Flanigan et al.
patent: 1442896 (2003-09-01), None
General definition of “Low K dielectric” www.wikipedia.org, Search word low K.
Definition of low-k dielectric by http://semiconductorglossary.com: search work: low-k.
Chinese Office Action for 2006100023526.

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