Dummy buried contacts and vias for improving contact via...

Details Dummy buried contacts and vias for improving contact via... Dummy buried contacts and vias for improving contact via...

2006-06-30

2010-06-15

Chambliss, Alonzo (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S758000, C257S774000, C257S786000, C257SE23011, C257SE23145

Reexamination Certificate

active

07737547

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a plurality of conductive layers. The device further includes buried contacts and buried vias, which connect the interconnect layers respectively. At least one of the contacts and vias are dummy contacts and dummy vias.

REFERENCES:
patent: 6486558 (2002-11-01), Sugiyama et al.
patent: 6693315 (2004-02-01), Kuroda et al.
patent: 2005/0167842 (2005-08-01), Nakamura et al.
patent: 06-085080 (1994-03-01), None
patent: 2000-208703 (2000-07-01), None

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