Dual wired integrated circuit chips

Details Dual wired integrated circuit chips Dual wired integrated circuit chips

2011-06-14

2011-06-14

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S618000, C438S622000, C257S758000, C257SE21575, C257SE23011, C257SE23142

Reexamination Certificate

active

07960245

ABSTRACT:
A semiconductor device having wiring levels on opposite sides and a method of fabricating a semiconductor structure having contacts to devices and wiring levels on opposite sides. The method including fabricating a device on a silicon-on-insulator substrate with first contacts to the devices and wiring levels on a first side to the first contacts, removing a lower silicon layer to expose the buried oxide layer, forming second contacts to the devices through the buried oxide layer and forming wiring levels over the buried oxide layer to the second contacts.

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