Dual wavelength optical annealing of materials

Details Dual wavelength optical annealing of materials Dual wavelength optical annealing of materials

1979-06-01

1980-11-18

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 219121L, 250492A, 357 91, H01L 21263

Patent

active

042343569

ABSTRACT:
A new mode of optical annealing is disclosed wherein two different wavelength pulses are used to anneal a damaged semiconductor substrate. The first pulse may be of relatively weak intensity, but is strongly absorbed by the solid substrate. The second pulse, which is not strongly absorbed by the solid substrate when in the solid phase, is strongly absorbed by the substrate when in the molten phase. Exposure to the first pulse results in the melting of the substrate, which then becomes highly absorptive to light at the wavelength of the second pulse. Readily available laser sources which are generally not highly absorbed by the semiconductor in the solid phase may thus be efficiently utilized.

REFERENCES:
patent: 3940289 (1976-02-01), Marquardt et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4133702 (1979-01-01), Krimmel
patent: 4155779 (1979-05-01), Auston et al.
Chen et al., "Multimode . . . Waveguides . . . Laser Heating" Appl. Phys. Letts. 29 (1976) 657.
Von Gutfeld, "The Extent of Crystallization . . . Optical Pulses . . . " Appl. Phys. Lett. 22 (1973) 257.
TSU et al., "Order-Disorder Transition . . . Laser Irradiation" Phys. Rev. Letts. 42 (May 1979) 1356.
Kachurin et al., "Annealing . . . Laser Radiation Pulses" Sov. Phys. Semicond. 9 (1976) 946.
Kachurin et al., "Annealing . . . Laser Beam" Sov. Phys. Semicond. 10 (1976) 1128.
Battaglin et al., " . . . Laser Annealing Si" Phys. Stat. Solidi. 49A (1978) 347.
Vitali et al., "Surface Structure . . . Laser . . . in Si" Phys. Letts. 63A (1977 351.
Foti et al., ". . . Laser Annealing . . . Self-Implanted Si" Appl. Phys. 15 (Apr. 1978) 365.
Geiler et al., " . . . Laser Induced Diffusion . . . " Phys. Stat. Solidi. 41(q) (1977) K-171.
Bolotov et al., " . . . Laser Annealing . . . " Sov. Phys. Semicond. 10 (1976) 338.
Krynicki et al., "Laser . . . Implanted Si" Phys. Letts. 61A (1977) 181.
Kutukova et al., "Laser Annealing of Implanted Si" Sov. Phys. Semicond. 10 (1976) 265.
Young et al., "Laser Annealing . . . B-Implanted Si" Appl. Phys. Letts. 32 (Feb. 1978) 139.
Klimenko et al., " . . . AR-Laser Radiation of Si" Sov. Jour. Quant. Electronics, 5 (1976) 1289.
Shtyrkov et al., "Local Laser Annealing . . . " Sov. Phys. Semicond. 9 (1976) 1309.
Campisano et al., "Laser Reordering . . . " Solid St. Electronics, 21 (Feb. 1978) 485.
Kular, "Post Laser Annealing . . . GaAs" Electronics Letts. 14 (Feb. 1978) 85.

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