Dual-wavelength light-emitting diode

Details Dual-wavelength light-emitting diode Dual-wavelength light-emitting diode

1980-09-10

1983-02-15

Sikes, William L.

357 16, 357 20, 357 55, 357 61, H01L 2906, H01L 3300

Patent

active

043743900

ABSTRACT:
A dual-wavelength light-emitting diode (10) is disclosed wherein at least two quaternary layers (102 and 104) are epitaxially grown on indium phosphide substrate (100) and a top indium phosphide layer (105) of the opposite conductivity type is grown to establish a junction (121) in the topmost quaternary layer. An isolation channel (106) cuts through the epitaxial layers and divides the device into two separate regions. A dopant is diffused into one of the regions in order to establish a pn junction (122) in the bottom quaternary layer. Independent electrical contacts (107 and 108) bonded to the top indium phosphide layer in each of the regions establish an electrical connection to pn junctions in each of the two separate regions. The device can be effectively heat sinked by mounting the epitaxial layer side of the substrate to a beryllium oxide heat sink (200) onto which gold bonding pads (201 and 202) have been plated.

REFERENCES:
patent: 3537029 (1970-10-01), Kressel et al.
patent: 3891993 (1975-06-01), Boneking
patent: 4032944 (1977-06-01), van Dongen et al.
patent: 4163953 (1979-08-01), Springthorpe et al.
patent: 4297720 (1981-10-01), Nishizawa et al.
S. Sakai, T. Aoki and Y. Amoniya, "A New InGaAsP/InP Dual-Wavelength LED", Applied Physics Letters, vol. 35, No. 8, (1979), pp. 588-589.
J. C. Campbell, T. P. Lee, A. G. Dentai and C. A. Bumes, "Dual-Wavelength Demultiplexing InGaAsP Photodiode", Applied Physics Letters, vol. 34, No. 6, (1979), pp. 401-402.

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