Dual-type thin-film field-effect transistors and applications

Details Dual-type thin-film field-effect transistors and applications Dual-type thin-film field-effect transistors and applications

2005-05-10

2005-05-10

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Having superconductive component

C438S149000

Reexamination Certificate

active

06890766

ABSTRACT:
A microelectronic device includes a gate layer adapted to receive an input voltage. An insulating layer is formed on the gate layer, and a conductive channel layer is formed on the insulating layer and carries current between a source and a drain. The conductive channel layer is adapted to provide a dual channel. The dual channel includes both a p-channel and an n-channel wherein one of the p-channel and the n-channel are selectively enabled responsive to the input voltage polarity. A method for forming the device and applications are also disclosed and claimed.

REFERENCES:
patent: 5278136 (1994-01-01), Bednorz et al.
patent: 6121642 (2000-09-01), Newns
patent: 02-100382 (1990-04-01), None
patent: 04-032264 (1992-02-01), None
patent: 05-190924 (1993-07-01), None
patent: 11-163365 (1999-06-01), None
Levy, A., et al.,Field-Effect Conductance of YBa2Cu3O6, J. Appl. Phys, vol. 69, No. 8, Apr. 15, 1991, pp. 4439-4441.
Newns, D.M., et al.,Mott Transition Field Effect Transistor, Appl. Phys. Lett., vol. 73, No. 6, Aug. 10, 1998, pp. 780-782.

Affiliated with

Also associated with

Rating

Dual-type thin-film field-effect transistors and applications does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual-type thin-film field-effect transistors and applications, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual-type thin-film field-effect transistors and applications will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3376004