Dual type magnetic sensing element wherein ΔR×A...

Details Dual type magnetic sensing element wherein ΔR×A... Dual type magnetic sensing element wherein ΔR×A...

2007-11-13

2007-11-13

Heinz, A. J. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

11155289

ABSTRACT:
In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be asymmetric. Thus, a value ΔR×A, which represents the variation in magnetoresistance×element area, for the upstream part of the multilayer film is controlled so as to be smaller than the value ΔR×A for the downstream part of the multilayer film.

REFERENCES:
patent: 6600638 (2003-07-01), Gill
patent: 7092219 (2006-08-01), Pinarbasi
patent: 7180714 (2007-02-01), Gill
patent: 2003/0035255 (2003-02-01), Hasegawa et al.
patent: 2003/0137785 (2003-07-01), Saito
patent: 2003/0179513 (2003-09-01), Pinarbasi
patent: 2003/0179514 (2003-09-01), Pinarbasi
patent: 2004/0008454 (2004-01-01), Gill
patent: 2005/0041342 (2005-02-01), Huai et al.

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