Dual trench isolation using single critical lithographic...

Details Dual trench isolation using single critical lithographic... Dual trench isolation using single critical lithographic...

2005-02-01

2005-02-01

Tokar, Michael (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

Reexamination Certificate

active

06849518

ABSTRACT:
A method and apparatus for forming shallow and deep isolation trenches in a substrate so that the shallow and deep isolation trenches are aligned without mis-registration. The method includes forming a plurality of shallow trenches, covering a portion of the plurality of shallow trenches, then etching the uncovered shallow trenches to create deeper trenches.

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patent: 6667222 (2003-12-01), Su et al.

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