Dual trench capacitor

Details Dual trench capacitor Dual trench capacitor

1997-05-15

1999-07-27

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613215, 257302, 257306, G11C 1124, H01L 218239, H01L 2710

Patent

active

059301074

ABSTRACT:
A dual trench structure for a high density trench DRAM. The dual trench structure, each of which can reside in part under the access device of a respective cell, does not require the use of expensive selective epi growth techniques. A sub-minimum lithographic trench opening can be used (1) to improve the cell area, (2) to increase the device length, and (3) to improve the margin of diffusion straps. Acceptable trench capacitance for the cells formed in a single opening can be achieved either by using thin capacitor dielectric, or by expanding the trenches laterally under the devices.

REFERENCES:
patent: 5065273 (1991-11-01), Rajeevakumar
patent: 5362663 (1994-11-01), Bronner et al.
patent: 5466628 (1995-11-01), Lee et al.
patent: 5594682 (1997-01-01), Lu et al.

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