Registers – Records – Conductive
Reexamination Certificate
2006-02-13
2008-11-04
Le, Uyen-Chau N (Department: 2887)
Registers
Records
Conductive
C438S669000
Reexamination Certificate
active
07445159
ABSTRACT:
Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.
REFERENCES:
patent: 6013396 (2000-01-01), Capodieci
patent: 6037082 (2000-03-01), Capodieci
patent: 6252271 (2001-06-01), Gambino et al.
patent: 6660653 (2003-12-01), Tzu et al.
patent: 6849518 (2005-02-01), Parat et al.
patent: 7033947 (2006-04-01), Tzu et al.
Chana Chung-Hsing
Tzu San-De
Yen Ming-Shuo
Le Uyen-Chau N
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
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