Dual trench alternating phase shift mask fabrication

Details Dual trench alternating phase shift mask fabrication Dual trench alternating phase shift mask fabrication

2006-04-25

2006-04-25

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S717000, C216S047000

Reexamination Certificate

active

07033947

ABSTRACT:
Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.

REFERENCES:
patent: 6159642 (2000-12-01), Kawano et al.
patent: 6528216 (2003-03-01), Park
patent: 6635393 (2003-10-01), Pierrat

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