Dual-tank etch method for oxide thickness control

Details Dual-tank etch method for oxide thickness control Dual-tank etch method for oxide thickness control

2008-07-29

2008-07-29

Everhart, Caridad M (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S750000, C257SE21249, C257SE21309, C216S099000

Reexamination Certificate

active

07405165

ABSTRACT:
A dual-tank etch method which is suitable for the stripping of a silicon nitride layer from a pad oxide layer provided on a substrate, and etching of the pad oxide layer to a desired target thickness, is disclosed. The method includes providing a first processing tank containing a silicon nitride-stripping chemical; stripping the silicon nitride layer from the pad oxide layer by placing the substrate in the first processing tank; providing a second processing tank containing an oxide-etching chemical; and etching the pad oxide layer to the desired target thickness by placing the substrate in the second processing tank. By carrying out the pad oxide-etching step and the silicon nitride-stripping step in separate processing tanks, accumulation of silicon oxide precipitates in the second processing tank is avoided.

REFERENCES:
patent: 5960297 (1999-09-01), Saki
patent: 6245681 (2001-06-01), Shields
patent: 6326313 (2001-12-01), Couteau et al.
patent: 2005/0028932 (2005-02-01), Shekel et al.

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