Dual species ion implantation of ternary compounds based on In-G

Details Dual species ion implantation of ternary compounds based on In-G Dual species ion implantation of ternary compounds based on In-G

1983-03-01

1985-01-22

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 61, 357 63, 357 91, H01L 21265, H01L 2948, H01L 2956

Patent

active

044949952

ABSTRACT:
A method for Ion implantation using multiple energy Be.sup.+ to produce p-type regions in n-In.sub.0.53 Ga.sub.0.47 As. A simple technique is used to develop capless annealing of InGaAs up to 700.degree. C. The ion implantation of silicon is then accomplished to create n.sup.+ layers in previously Be-implanted InGaAs epilayers. The active efficiency of 40% for 50 KeV Be implant has been found and efficiencies of 86% and 38% are found for the low and high energy Si implants respectively.

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