Dual species ion implantation into GaAs

Details Dual species ion implantation into GaAs Dual species ion implantation into GaAs

1981-09-10

1983-05-31

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576E, 148187, 357 61, 357 91, H01L 21263

Patent

active

043859380

ABSTRACT:
p- and n- layers in GaAs by dual implants with either Ge and Ga or Ge and As into GaAs have been produced. The amphoteric behavior of Ge implants is modified in a predictable manner through control of ion dose and annealing temperature by dual implantation. The (Ge+Ga) dual implants have produced p-type conductivity for all doses up to an anneal temperature of 900.degree. C. The (Ge+As) dual implants have yielded a significant enhancement of the n-type activity for ion doses .gtoreq.1.times.10.sup.15 /cm.sup.2, a conductivity type conversion for intermediate doses and little effect upon p-type activity for ion doses .ltoreq.3.times.10.sup.13 /cm.sup.2. By selecting appropriate ion energy, ion dose, and annealing temperature, formation of p-n junction is envisioned.

REFERENCES:
Pedroti et al., J. Appl. Phys. 51, (Nov. 1980) 5781.
Yeo et al., J. Appl. Phys. 51, (Nov. 1980) 5785.
Stoneham et al., Jour. Electronic Materials, 9 (1980) 371.
Stollte, C.A., in Ion Implantation in Semi-Conductors, 1976, ed. Chernow et al., Plenum, N.Y., p. 149.
Weyer et al., Phys. Rev. Letts. 44, (1980) 155.
Brozel et al., Jour. Crystal Growth, 50 (1980) 619.
Vaidyanathan et al., J. Electrochem. Soc. 124, (1977) 1781.

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