Dual SOI film thickness for body resistance control

Details Dual SOI film thickness for body resistance control Dual SOI film thickness for body resistance control

2007-08-07

2007-08-07

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S218000, C438S219000

Reexamination Certificate

active

10834095

ABSTRACT:
The silicon-on-insulator (SOI) arrangement provides dual SOI film thicknesses for body-resistance control and provides a bulk silicon substrate on which a buried oxide (BOX) layer is provided. The BOX layer has recesses formed therein and unrecessed portions. The silicon layer is formed on the BOX layer and closes the recesses and covers the unrecessed portions of the BOX layer. Shallow trench isolation regions define and isolate first silicon regions from second silicon regions that each include one of the recesses. Floating-body devices are formed within the first silicon regions, which exhibit a first thickness, and body-tied devices are formed within the second silicon regions that include the thicker silicon of the recesses.

REFERENCES:
patent: 6281593 (2001-08-01), Brown et al.
patent: 6492209 (2002-12-01), Krishnan et al.
patent: 6724046 (2004-04-01), Oyamatsu

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