Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-12-12
2006-12-12
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE23063, C257S673000, C257S676000, C257S734000, C257S775000, C257S776000, C257S691000, C257SE23066, C257S666000, C257S698000
Reexamination Certificate
active
07148564
ABSTRACT:
An integrated circuit package includes a first non-conductive substrate having a first inner surface and a second non-conductive substrate having a second inner surface. A die having a first thickness is disposed between the first and second inner surfaces. A leadframe includes a member having a proximal end and a distal end. The proximal end has a second thickness less than the first thickness. The distal end is disposed between the first and second inner surfaces. The distal end is undulated such that the distal end has an effective thickness greater than the second thickness.
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Gerbsch Erich W.
Mock Roger A
Delphi Technologies Inc.
Funke Jimmy L.
Williams Alexander Oscar
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