Dual-sided microstructured, position-sensitive detector

Details Dual-sided microstructured, position-sensitive detector Dual-sided microstructured, position-sensitive detector

2007-07-10

2007-07-10

Richards, N. Drew (Department: 2815)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S370110, C250S370140, C257S428000

Reexamination Certificate

active

10481091

ABSTRACT:
The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being provided by dividing an n-layer into individual segments. Said segments of the n-layer are 20–500 μm wide. Said detectors are produced by diffusing ions on the side of the semi-conductor material in order to produce an n-contact. A metallic layer is metallized thereon. Trenches are etched between the segments by means of lithography for the segmentation thereof. The inventive detector is high-powered and inter alia enables a high local resolution and high counting rates.

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P. Holl et al., A Double-Sided Silicon Strip Detector with Capacitive Readout and a New Method of Integrated Bias Coupling, Feb. 1989, IEEE, Transactions on Nuclear Science, vol. 36, No. 1, pp. 251-255.
J. T. Walton et al., Si(Li) X-Ray Detectors with Amorphous Silicon Passivation, Feb. 1984, IEEE, Transactions on Nuclear Science, vol. NS-31, No. 1, pp. 331-335.

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