Dual sided lithographic substrate imaging

Details Dual sided lithographic substrate imaging Dual sided lithographic substrate imaging

2005-01-18

2005-01-18

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S458000, C438S459000, C438S461000, C438S462000, C438S463000, C438S455000, C438S008000, C438S007000, C438S009000, C438S005000, C355S067000, C355S053000, C355S071000, C356S401000, C356S399000, C356S400000, C250S442110, C250S441110

Reexamination Certificate

active

06844244

ABSTRACT:
A device manufacturing method capable of imaging structures on both sides of a substrate, is presented herein. One embodiment of the present invention comprises a device manufacturing method that etches reversed alignment markers on a first side of a substrate to a depth of 10 μm, the substrate is flipped over, and bonded to a carrier wafer and then lapped or ground to a thickness of 10 μm to reveal the reversed alignment markers as normal alignment markers. The reversed alignment markers may comprise normal alignment patterns overlaid with mirror imaged alignment patterns.

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