Dual Schottky contact avalanche semiconductor structure with ele

Details Dual Schottky contact avalanche semiconductor structure with ele Dual Schottky contact avalanche semiconductor structure with ele

1979-03-19

1981-08-25

Clawson, Jr., Joseph E.

357 15, H01L 2990

Patent

active

042862760

ABSTRACT:
A semiconductor structure comprising two conventional electrodes of an avalanche diode and furthermore a supplementary electrode. In a preferred embodiment the conventional and supplementary electrodes form two combs of which the teeth are intermingled and separated from one another by intervals of the same order of magnitude as the thickness of the active layer wherein the avalanche rises. There are two functioning cases. In a first case the biassing voltage applied to the supplementary electrode is lower than the breakdown voltage and the operating conditions of the avalanche diode is optimised or controlled as in a modulator or a frequency shifter. In a second case the biassing voltage applied to the supplementary electrode is higher than the breakdown voltage and the power and/or efficiency of an amplifier or oscillator using such a structure is increased.

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