Dual regeneration bandgap reference voltage generator

Details Dual regeneration bandgap reference voltage generator Dual regeneration bandgap reference voltage generator

1999-02-26

1999-12-14

Nguyen, Matthew

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323313, 327539, G05F 316

Patent

active

060022450

ABSTRACT:
A dual regeneration bandgap voltage generator circuit includes both CMOS and bipolar regeneration bandgap voltage generator circuits. Each of the regeneration bandgap voltage generator circuits is formed by cross-coupling current mirror circuits of opposite conductivity types. Upon initial application of power, the CMOS circuit becomes active first due to its higher leakage current. The "on" current from the CMOS circuit is then used to initiate current conduction within the bipolar circuit. Once the bipolar circuit begins operating, it turns the CMOS circuit off.

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patent: 5087830 (1992-02-01), Cave et al.
patent: 5270591 (1993-12-01), Ross
patent: 5545978 (1996-08-01), Pontius
patent: 5739703 (1998-04-01), Okamura
patent: 5910748 (1999-06-01), Reffay et al.

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