Dual ramp rate dielectric breakdown testing methodology

Details Dual ramp rate dielectric breakdown testing methodology Dual ramp rate dielectric breakdown testing methodology

2005-11-22

2005-11-22

Patel, Paresh (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S719000, C438S017000

Reexamination Certificate

active

06967499

ABSTRACT:
The present invention provides, in one aspect, a method of testing an electrical breakdown characteristic of a dielectric in a microelectronic device. This method includes determining a first dielectric breakdown voltage distribution of a first test sample by using a first voltage ramp rate, determining a second dielectric breakdown voltage distribution of a second test sample by using a second voltage ramp rate and determining a spacing distribution between conductive lines in the first and second test samples based on a field acceleration factor associated with the dielectrics of the first and second test samples, the first and second voltage ramp rates, and a difference between the first and second breakdown voltage distributions. This spacing distribution is used to determine corrected electric breakdown fields based on a measured breakdown voltage of a test sample, to improve microelectronic-device screening for interconnect dielectric reliability.

REFERENCES:
patent: 4144493 (1979-03-01), Lee et al.
patent: 6509202 (2003-01-01), Kim
patent: 6603321 (2003-08-01), Filippi et al.
patent: 6617179 (2003-09-01), Kim

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