Dual purpose collector contact and isolation scheme for advanced

Details Dual purpose collector contact and isolation scheme for advanced Dual purpose collector contact and isolation scheme for advanced

1992-09-11

1994-10-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 31, 437 26, 437 67, 148DIG10, H01L 21265

Patent

active

053588843

ABSTRACT:
A scheme and method of fabrication for creating bipolar semiconductor devices with reduced size and greater speed while maintaining device isolation. Using a mesa structure isolated by trenches, collector contact is achieved by a vertical layer of polysilicon surrounding the mesa, deposited within the trench during fabrication.

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A Surrounding Gate Transistor (SGT) Cell for 64/256 Mbit DRAMs, IEDM 89-23 ,1989 IEEE, Sunouchi et al., pp. 2.1.1-2.1.4.

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