Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2005-05-05
2009-11-03
Ha, Nathan W (Department: 2814)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C257SE23194
Reexamination Certificate
active
07611966
ABSTRACT:
A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser melts portions of the workpiece prior to a second laser ablating the portions of the workpiece.
REFERENCES:
patent: 5641416 (1997-06-01), Chadha
patent: 5751419 (1998-05-01), Takahashi et al.
patent: RE37585 (2002-03-01), Mourou et al.
patent: 6562698 (2003-05-01), Manor
patent: 6841482 (2005-01-01), Boyle
patent: 7157038 (2007-01-01), Baird et al.
patent: 7169687 (2007-01-01), Li et al.
patent: 7265034 (2007-09-01), Lu et al.
patent: 2006/0088984 (2006-04-01), Li et al.
U.S. Appl. No. 10/972,108, filed Oct. 21, 2004, Li et al.
U.S. Appl. No. 10/980,943, filed Nov. 3, 2004, Li et al.
Willmott, P.R. et al.,Pulsed Laser Vaporization and Deposition, Reviews of Modern Physics, vol. 72, No. 1, Jan. 2000, pp. 315-328.
Rong, Fu-Xiao,Liquid Target Pulsed Laser Deposition, Applied Physics Letters, vol. 67, No. 7, Aug. 14, 1995, pp. 1022-1024.
Li Eric J.
Rumer Christopher L.
Voronov Sergei L.
Blakely , Sokoloff, Taylor & Zafman LLP
Ha Nathan W
Intel Corporation
LandOfFree
Dual pulsed beam laser micromachining method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dual pulsed beam laser micromachining method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual pulsed beam laser micromachining method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4136992