Dual polarization quantum well laser in the 200 to 600 nanometer

Details Dual polarization quantum well laser in the 200 to 600 nanometer Dual polarization quantum well laser in the 200 to 600 nanometer

1995-12-29

1998-10-27

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 27, 372 46, H01S 319, H01S 310

Patent

active

058286845

ABSTRACT:
A semiconductor laser source using a strained active layer of an indium gallium aluminum nitride (In.sub.x Ga.sub.1-x-y Al.sub.y N) quaternary alloy to obtain semiconductor laser sources that emit TE or TM polarized light in the wavelength range of 200 to 600 nm.

REFERENCES:
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5383211 (1995-01-01), Van De Walle et al.
patent: 5465263 (1995-11-01), Bour et al.
patent: 5497390 (1996-03-01), Tanaka et al.
patent: 5646953 (1997-07-01), Naito et al.
Nakamura et al., "Candela-class High-Brightness InGaN/AIGaN Double-Heterostructure Blue-Light-Emitting Diodes", Appl. Phys. Lett., vol. 64, No. 13, pp. 1687-1689, Mar. 1994.

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