Dual polarization laser diode with quaternary material system

Details Dual polarization laser diode with quaternary material system Dual polarization laser diode with quaternary material system

1993-12-23

1995-08-01

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 3103

Patent

active

054385849

ABSTRACT:
A semiconductor laser source using a strained active layer of GaAsP or InGaAsP or AlGaAsP to obtain semiconductor laser sources that emit TM-polarized light in the wavelength range of 600-870 nm. Preferably, the active layer is flanked by confining layers of AlGaAs or (AlGa).sub.0.52 In.sub.0.48 P. The active layer under proper conditions can also emit TE-polarized light. Hence, arrays of side-by-side orthoginally-polarized emitters, or switchable polarized emitters are feasible.

REFERENCES:
R. L. Moon, G. A. Antypas, and L. W. James, Journal of Eectronic Materials 3, 635 (1974). (no month available).
H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers Part B: Materials and Operating Characteristics, pp. 14-17, 22-23, Academic Press, Orlando, Fla. 1978. (no month available).
M. J. B. Boermans et al. Investigation of TE and TM polarised laser emission in GalnP/AlGalnP lasers by growth-controlled strain, Electronics Letters 26, 1438 (1990) August.

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