Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate
2006-07-13
2008-08-12
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Addressing
Plural blocks or banks
C365S230060, C365S230080, C365S230040, C365S189040
Reexamination Certificate
active
07411858
ABSTRACT:
A dual-plane type flash memory device having a random program function and program operation method thereof. The flash memory device includes a first plane, a second plane, a first X-decoder, and a second X-decoder. The first plane includes first memory blocks sequentially arranged in a row direction. The second plane includes second memory blocks sequentially arranged in a row direction. The first X-decoder activates one of the first memory blocks in response to a first block address signal. The second X-decoder activates one of the second memory blocks in response to a second block address signal. The block activated by the first X-decoder of the first memory block is different from the block activated by the second X-decoder of the second memory blocks. Accordingly, during a program operation, memory blocks of two planes having different block addresses can be selected and programmed. Accordingly, the operational performance of the flash memory device can be enhanced.
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Hynix / Semiconductor Inc.
Lowe Hauptman & Ham & Berner, LLP
Nguyen Tuan T.
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