Dual-pixel full color CMOS imager with large capacity well

Details Dual-pixel full color CMOS imager with large capacity well Dual-pixel full color CMOS imager with large capacity well

2008-10-14

2010-10-19

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S057000, C438S059000, C438S060000, C438S073000, C257S225000, C257S233000, C257S288000, C257S291000, C257S292000, C257S293000, C257S431000

Reexamination Certificate

active

07816170

ABSTRACT:
A dual-pixel full color CMOS imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer at a first depth overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. A single photodiode including a bottom p doped layer overlies the substrate at a third depth. The third depth is less than, or equal to the first depth. A bottom n doped layer overlies the bottom p doped layer, a top p doped layer directly overlies the bottom n doped layer without an intervening layer, and a top n doped layer overlies the top p doped layer.

REFERENCES:
patent: 2002/0125513 (2002-09-01), Inoue
patent: 2004/0178478 (2004-09-01), Shizukuishi
patent: 2005/0087829 (2005-04-01), Merrill et al.
patent: 2009/0001427 (2009-01-01), Adkisson et al.
Younsub Lim et al., “Stratified photodiode a new concept for small size high performance CMOS image sensor pixels,” 2007 IEEE Image Sensor Workshop, p. 311-314 (2007).

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