Dual phase and hybrid phase shifting mask fabrication using a su

Etching a substrate: processes – Forming or treating mask used for its nonetching function

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216 59, 216 67, 216 75, 216 79, 430 5, B44C 122, C23F 102

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054658594

ABSTRACT:
A subtractive method for making a Levenson type lithographic phase shift mask using a sacrificial etch monitor film in which some of the monitor film is left standing on the opaque portions of the mask. The monitor film otherwise is consumed when it is simultaneously etched with selected portions of the mask substrate to produce recesses of desired depth in the substrate. The etching is stopped upon detecting that the etched monitor film is completely consumed. The technique also is adapted for the fabrication of a RIM type lithographic phase shift mask combined with the Levenson type phase shift mask in the same mask. The technique further is adapted to include 90 degree shift transitions at the end of the Levenson line-space pairs of the mask. The monitor film left standing on the opaque portions of the mask provides self-aligned phase error correction to offset sidewall scattering in the Levenson type mask.

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