Etching a substrate: processes – Forming or treating mask used for its nonetching function
Patent
1994-04-28
1995-11-14
Powell, William
Etching a substrate: processes
Forming or treating mask used for its nonetching function
216 59, 216 67, 216 75, 216 79, 430 5, B44C 122, C23F 102
Patent
active
054658594
ABSTRACT:
A subtractive method for making a Levenson type lithographic phase shift mask using a sacrificial etch monitor film in which some of the monitor film is left standing on the opaque portions of the mask. The monitor film otherwise is consumed when it is simultaneously etched with selected portions of the mask substrate to produce recesses of desired depth in the substrate. The etching is stopped upon detecting that the etched monitor film is completely consumed. The technique also is adapted for the fabrication of a RIM type lithographic phase shift mask combined with the Levenson type phase shift mask in the same mask. The technique further is adapted to include 90 degree shift transitions at the end of the Levenson line-space pairs of the mask. The monitor film left standing on the opaque portions of the mask provides self-aligned phase error correction to offset sidewall scattering in the Levenson type mask.
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Chapple-Sokol Jonathan D.
Hsu Louis L.-C.
Tsang Paul J.-M.
Yuan Chi-Min
International Business Machines - Corporation
Powell William
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