Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Reexamination Certificate
2011-01-04
2011-01-04
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
C438S053000
Reexamination Certificate
active
07863646
ABSTRACT:
A transistor structure includes a first type of transistor (e.g., P-type) positioned in a first area of the substrate, and a second type of transistor (e.g., N-type) positioned in a second area of the substrate. A first type of stressing layer (compressive conformal nitride) is positioned above the first type of transistor and a second type of stressing layer (compressive tensile nitride) is positioned above the second type of transistor. In addition, another first type of stressing layer (compressive oxide) is positioned above the first type of transistor. Further, another second type of stressing layer (compressive oxide) is positioned above the second type of transistor.
REFERENCES:
patent: 6995065 (2006-02-01), Chou et al.
patent: 7585704 (2009-09-01), Belyansky et al.
patent: 2006/0226490 (2006-10-01), Burnett et al.
Belyansky Michael P.
Chen Xiangdong
Dyer Thomas W.
Wang Geng
Yang Haining S.
Cai, Esq. Yuanmin
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Lee Calvin
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