Dual mode power transistor

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307575, 307362, 307577, 307270, H03K 1704, H03K 1712, H03K 1768, H03K 17687

Patent

active

044802013

ABSTRACT:
A dual mode power transistor circuit is provided for optimizing ON state dissipation, base drive requirements, and switching speed in applications subject to large overload currents for short periods of time. The circuit has dual modes or regions of operation: (1) rated current and below; and (2) overload current. In the overload region, additional base drive is supplied to the bipolar power transistor while also keeping such transistor in its active region, out of saturation, to enable fast turn-off. The additional base drive is supplied at a given sensed current-induced threshold voltage and enables the transistor to conduct increased collector current therethrough, which in turn reduces the otherwise increased collector to emitter voltage. Turn-off power dissipation is substantially reduced, in spite of the increased collector current, due to the drastically reduced collector to emitter voltage. Particularly simple dual mode Darlington-like transistor circuitry is disclosed. Bidirectional dual mode transistor circuitry is also disclosed.

REFERENCES:
patent: 4055794 (1977-10-01), Ickes et al.
patent: 4149098 (1979-04-01), Wright
patent: 4215279 (1980-07-01), Lataire et al.
patent: 4286175 (1981-08-01), Baker

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