Dual metal Schottky diode

Details Dual metal Schottky diode Dual metal Schottky diode

2005-12-06

2005-12-06

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

C257S473000

Reexamination Certificate

active

06972470

ABSTRACT:
An embodiment of the invention is a Schottky diode22having a semiconductor substrate3, a first metal24, a barrier layer26, and second metal28. Another embodiment of the invention is a method of manufacturing a Schottky diode22that includes providing a semiconductor substrate3, forming a barrier layer26over the semiconductor substrate3, forming a first metal layer23over the semiconductor substrate3, annealing the semiconductor substrate3to form areas24of reacted first metal and areas23of un-reacted first metal, and removing selected areas23of the un-reacted first metal. The method further includes forming a second metal layer30over the semiconductor substrate3and annealing the semiconductor substrate3to form areas28of reacted second metal and areas30of un-reacted second metal.

REFERENCES:
patent: 4491860 (1985-01-01), Lim
patent: 4595942 (1986-06-01), Lohstroh
patent: 4672412 (1987-06-01), Wei et al.
patent: 5059555 (1991-10-01), Iranmanesh et al.
patent: 5710447 (1998-01-01), Tohyama
patent: 2003/0087482 (2003-05-01), Hwang et al.
patent: 2 112 566 (1983-07-01), None
Takano Hisanaga, et al. “Semiconductor Element and Method for Manufacturing the Same ” Patent Abstracts of Japan, Publication No. 2003-197924, Jul. 11, 2003.

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