Dual metal-alloy nitride gate electrodes

Details Dual metal-alloy nitride gate electrodes Dual metal-alloy nitride gate electrodes

2003-08-13

2004-10-26

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

C257S501000, C257S369000

Reexamination Certificate

active

06809394

ABSTRACT:

BACKGROUND OF THE INVENTION
This invention relates to a gate electrode having an adjustable work function.


REFERENCES:
patent: 2002/0123189 (2002-09-01), Cha et al.
patent: 2004/0080000 (2004-04-01), Tsui et al.
Jaehoon Lee et al., “Tunable Work Function Dual Metal Gate Technology for Bulk and Non-Bulk CMOS” International Electronic Device Meeting (IEDM) 2002.
S.B. Samavedam et al., “Dual-Metal Gate CMOS with HfO2Gate Dielectric” International Electronic Device Meeting (IEDM) 2002.
Huicai Zhong et al., “Properties of Ru-Ta Alloys as Gate Electrodes for NMOS and PMOS Silicon Devices” International Electronic Device Meeting (IEDM) 2001.
Dae-Gyu Park et al., “Robust Temary Metal Gate Electrodes for Dual Gate CMOS Devices” International Electronic Device Meeting (IEDM) 2001.

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