Dual layer passivation

Details Dual layer passivation Dual layer passivation

1982-06-21

1984-05-01

Newsome, John H.

Stock material or miscellaneous articles

Composite

Of quartz or glass

357 54, 427 39, 427 93, 428432, B05D 314

Patent

active

044461941

ABSTRACT:
When multilayer-metal electronic devices are heated, voids can form in the metal layers. Void formation is avoided by using a double dielectric layer as the interlayer dielectric. The double layer has a first oxide layer portion in contact with the first metal which is formed by plasma assisted chemical vapor deposition, and a second oxide layer portion formed by other means. The plasma formed oxide layer portion is believed to be in compressive stress relative to the substrate.

REFERENCES:
patent: 3560810 (1971-02-01), Balk et al.
patent: 4076575 (1978-02-01), Chang
patent: 4086614 (1978-04-01), Scheidel
patent: 4091406 (1978-05-01), Lewis
patent: 4091407 (1978-05-01), Williams et al.

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