Dual layer epitaxtial base heterojunction bipolar transistor

Details Dual layer epitaxtial base heterojunction bipolar transistor Dual layer epitaxtial base heterojunction bipolar transistor

1992-09-08

1994-06-21

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257592, 257588, H01L 29161, H01L 29205, H01L 29225

Patent

active

053230329

ABSTRACT:
A Si-SiGe-Si heterojunction bipolar transistor which has a very thin epitaxial base layer. The device possesses an optimum doping profile across a base layer. The emitter region is higher doping concentration of n.sup.+ -type. The base layer of p-type comprises both a monocrystalline SiGe layer having a lightly doped region on a collector side and a heavily doped region, and a lightly doped monocrystalline Si layer on an emitter side. An emitter side Si-SiGe heterojunction exists in the base layer and a collector side Si-SiGe heterojunction exists in the collector region. Those provides a slope negative gradient of a potential profile from the emitter to collector without a potential barrier for carriers, or electrons or holes. The very thin base layer is connected to an aluminium contact through an external base layer and a base contact layer thereby permitting the very thin base layer to be free from a damage by contacting with a metal such as aluminium. In replacement of this, the base layer may be formed thereunder with a base contact layer to cover the damage of the base layer.

REFERENCES:
patent: 5117271 (1992-05-01), Comfort et al.
patent: 5140400 (1992-08-01), Morishita
patent: 5177583 (1993-01-01), Endo et al.
"Ge.sub.x Si.sub.l-x Stained-Layer Heterostructure Bipolar Transistors"; H. Temkin et al., Nov. 1987, pp. 1089-1091.
"Highly Planar Polysilicon-Base Transistor with Low Metal Land Capacitance"; IBM Technical Disclosure Bulletin; vol. 27, No. 10A; pp. 5790-5794, Mar., 1985.
"Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistor", John D. Cressler et al., IEEE Electron Device Letters, vol. 12, No. 4, Apr. 1991, pp. 166-168.
"The Effect of Base-Emitter Spacers and Strain-Dependent Densities of States In Si/Si.sub.1-x Ge.sub.x /Si Heterojunction Bipolar Transistors", E. J. Prinz et al., IEEE, 1989, pp. 27.1.1-27.1.4.

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