Dual junction photoelectric semiconductor device

Details Dual junction photoelectric semiconductor device Dual junction photoelectric semiconductor device

1979-07-24

1982-03-02

Edlow, Martin H.

357 52, 357 86, H01L 2714

Patent

active

043181155

ABSTRACT:
A photoelectric semiconductor device is disclosed which exhibits a reduced spectral sensitivity in a desired wavelength zone. An N(P) type impurity region is formed in a P(N) type semiconductor substrate to establish a first PN junction functioning as a first photodiode. A P(N) type impurity region is shallowly formed in the N(P) type impurity region to establish a second PN junction functioning as a second photodiode. When the first PN junction is shunted, the photoelectric semiconductor device shows a spectral sensitivity which is reduced in the longer wavelength zone. Contrarily, when the second PN junction is shunted, the photoelectric semiconductor device shows the spectral sensitivity which is reduced in the shorter wavelength zone.

REFERENCES:
patent: 3443102 (1969-05-01), Kaye
patent: 3484663 (1969-12-01), Halus
patent: 3677280 (1972-07-01), Weckler
patent: 3812518 (1974-05-01), Kurz et al.
patent: 3987298 (1976-10-01), Rotolante
patent: 4011016 (1977-03-01), Layne et al.
patent: 4053922 (1977-10-01), Ferro

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